Methods for the ICP-OES Analysis of Semiconductor Materials
Methods for the ICP-OES Analysis of Semiconductor Materials
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DOI：
10.1021/acs.chemmater.0c00255
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发表时间：
2020-03-10
影响因子：
8.6
通讯作者：
Buhro, William E.
中科院分区：
文献类型：
--
作者：
Morrison, Calynn;Sun, Haochen;Buhro, William E.
电感耦合等离子体光谱分析半导体材料的成分分析技术对分析结果的准确性和重现性有很大的影响。我们描述了样品制备、校准、标准选择和数据收集的方法。建议了分析含锌、镉、S、硒和碲元素的II-VI化合物和纳米晶体的具体方案。我们预计所提供的方法将更普遍地适用于其他家族的半导体材料，如III-V和IV-VI纳米晶体。
The techniques employed in the compositional analysis of semiconductor materials by inductively coupled plasma optical emission spectroscopy (ICP-OES) dramatically influence the accuracy and reproducibility of the results. We describe methods for sample preparation, calibration, standard selection, and data collection. Specific protocols are suggested for the analysis of II-VI compounds and nanocrystals containing the elements Zn, Cd, S, Se, and Te. We expect the methods provided will apply more generally to semiconductor materials from other families, such as to III-V and IV-VI nanocrystals.