Photoluminescence optimization and characteristics of the rare-earth element erbium implanted in GaAs, InP, and GaP
Photoluminescence optimization and characteristics of the rare-earth element erbium implanted in GaAs, InP, and GaP
复制标题
GaAs、InP和GaP中稀土元素铒注入的光致发光优化及特性
DOI：
10.1063/1.336619
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发表时间：
1986
影响因子：
3.2
通讯作者：
W. Haydl
中科院分区：
文献类型：
--
作者：
G. Pomrenke;H. Ennen;W. Haydl
用10-K光致发光研究了稀土元素Er在GaP、InP和GaP中的1.54μm发射随退火温度、时间和方法的变化规律。在400~1000 °C范围内采用了条带加热法、成型气退火法和石英安培退火法，在1.48~1.64μm范围内观察到了与Er2+有关的发射，并且在高达260K的InP：Er和296K的GaP：Er和GaP：Er的发射温度下观察到了与Er2+有关的发射。在这三种半导体中，利用正方形注入技术观察到了最高的光学激活。根据不同的退火方法，最佳的Er发射出现在650-800 °C之间，InP在575-625 °C之间，间隙在800-950 °C之间。总的来说，成型气体退火法被证明是最成功的；然而，最大的发光包括更尖锐的发射线是通过条状加热法获得的。该方法在10 S的热处理时间下，具有较好的抗拉强度和抗拉强度。
The characteristic 1.54‐μm emission from the rare‐earth element erbium implanted in GaAs, InP, and GaP was investigated through 10‐K photoluminescence essentially as a function of anneal temperature, time, and method. The strip‐heater, forming‐gas, and quartz‐ampoule anneal methods were utilized in the range of 400 to 1000 °C. Erbium‐related emissions were observed from 1.48 to 1.64 μm and were observable at emission temperatures of up to 260 K for InP:Er and 296 K for GaP:Er and GaAs:Er. Out of the three semiconductors, GaAs:Er was observed to exhibit the highest optical activation using a square‐profile implantation technique. Dependent on the anneal method, optimum Er emissions occurred between 650 and 800 °C for GaAs, for InP between 575 and 625 °C, and for GaP between 800 and 950 °C. In general, the forming‐gas anneal method proved most successful; however, maximum luminescence including sharper emission lines was achieved through the strip‐heater method. This method, with an anneal time of 10 s, sho...