Relaxation of strained, epitaxial Si1−xSnx
Relaxation of strained, epitaxial Si1−xSnx
复制标题
应变外延 Si1−xSnx 的弛豫
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
A. Larsen
中科院分区：
文献类型：
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作者：
M. Fyhn;J. Chevallier;A. Larsen
用卢瑟福背散射谱和透射电子显微镜研究了用分子束外延法在Si衬底上生长的高质量应变Si 1 −xSnx（2.5%Snx <$5%）的热稳定性。在400-950 °C的温度范围内退火1小时后，发现Sn的沉淀弛豫以及失配位错和位错环的产生，这与Sn在Si中的低溶解度以及Si和Si 1 −xSnx之间的大晶格失配一致。在应变Si 1 −xSnx外延层中，应变与Sn浓度成正比，沉淀物和失配位错产生的阈值温度随着Sn浓度的增加而降低。在阈值温度以上，不同弛豫通道的影响随温度和成分的变化而变化;在接近阈值的温度下，可以看到正交的界面失配位错网络，而在较高的温度下，主要是位错网络。
The thermal stability of high quality, strained Si1−xSnx, 2.5%⩽x⩽5%, grown by molecular beam epitaxy on Si 〈001〉 substrates has been investigated by Rutherford backscattering spectrometry and transmission electron microscopy. As a result of annealing at temperatures in the range 400–950 °C for 1 h, both relaxation by precipitation of Sn and generation of misfit dislocations and dislocation loops were found, consistent with the low solubility of Sn in Si and the large lattice mismatch between Si and Si1−xSnx. In the epitaxial, strained Si1−xSnx layers, where the strain is proportional to the Sn concentration, the threshold temperature for generation of precipitates and misfit dislocations was found to decrease with increasing Sn concentration. Above the threshold temperature the influences of the different relaxation channels change considerably with temperature and composition; an orthogonal interfacial misfit dislocation network is seen at temperatures close to threshold while at higher temperatures main...