GHz-range SAW device using nano-meter electrode fabrication technology
GHz-range SAW device using nano-meter electrode fabrication technology
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采用纳米电极制造技术的 GHz 范围 SAW 器件
DOI：
10.1109/ultsym.1994.401622
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
K. Yamanouchi
中科院分区：
文献类型：
--
作者：
K. Yamanouchi
纳米光刻技术在高密度集成电路和高频声表面波器件中具有重要意义。移动的通信系统的频率范围现在在1 GHz区域中并且扩展到2-4 GHz。此外，SAW器件需要大约10 GHz的频率范围。需要0.1 μm以下的纳米技术。本文介绍了各种精细光刻技术的纳米加工工艺、GHz声表面波器件的电极制作和使用单向换能器的低损耗滤波器的制作，并给出了使用电子束直写的10 GHz声表面波叉指换能器的剥离光刻技术。接下来，报道了在128° Y-X LiNbO 3上制备0.03 μm厚、0.05 μm宽叉指换能器的新光刻技术。10 GHz范围内的SAW常规叉指换能器和滤波器的插入损耗约为15 dB的SAW实验结果。还介绍了GHz范围的声表面波器件、低损耗滤波器和信号处理
Nano-meter lithography technology is very important for high density integrated circuits and higher frequency-range SAW devices. The frequency ranges of mobile communication systems are now in the 1 GHz region and extending to 2-4 GHz. Moreover SAW devices require a frequency range of around 10 GHz. Nano-meter technology below 0.1 μm is required. In this paper, nano-meter fabrication processing with various types of fine lithography technology, electrode fabrication for GHz SAW devices and low-loss filters using unidirectional transducers are described, The lift-off lithography techniques for a 10 GHz SAW IDT using direct wafer electron beam writing are shown. Next, new lithography techniques are reported for a 0.05 μm width IDT with thickness of about 0.03 μm on 128° Y-X LiNbO3. SAW experimental results on 10 GHz-range SAW conventional interdigital transducers and filters with an insertion loss of around 15 dB are shown. GHz-range SAW devices, low-loss filters and signal processing are also described