Suppressed Short-Channel Effect of Double-Gate Metal Oxide Semiconductor Field-Effect Transistor and Its Modeling
Suppressed Short-Channel Effect of Double-Gate Metal Oxide Semiconductor Field-Effect Transistor and Its Modeling
复制标题
双栅金属氧化物半导体场效应晶体管的抑制短沟道效应及其建模
DOI：
10.1143/jjap.46.2096
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发表时间：
2007
影响因子：
1.5
通讯作者：
M. Miura
中科院分区：
文献类型：
--
作者：
H. Oka;R. Tanabe;N. Sadachika;A. Yumisaki;M. Miura
双栅金属氧化物半导体场效应晶体管（MOSFET）被认为是下一代器件的一种很有前途的器件。我们建立了一个描述DG-MOSFET短沟道效应的模型。该模型描述了抑制短沟道效应与硅层厚度的减少。通过考虑体积反转效应，实现了进一步抑制短沟道效应的建模。开发的模型再现了抑制短沟道效应的DG-MOSFET的硅层厚度的函数下降到10 nm的任何栅极长度与三个模型参数。
The double-gate (DG) metal oxide semiconductor field-effect transistor (MOSFET) is considered to be a promising for the next-generation device. We have developed a model describing the short-channel effects of the DG-MOSFET. The model describes suppression of the short-channel effect with the reduction of the silicon layer thickness. Modeling for further suppression of the short-channel effect is achieved by considering the volume inversion effect. The developed model reproduces the suppressed short-channel effect of the DG-MOSFET as a function of the silicon layer thickness down to 10 nm for any gate length with three model parameters.