CLASSIFICATION OF SURFACE-DEFECTS ON GAAS GROWN BY MOLECULAR-BEAM EPITAXY
CLASSIFICATION OF SURFACE-DEFECTS ON GAAS GROWN BY MOLECULAR-BEAM EPITAXY
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DOI：
10.1149/1.2108627
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发表时间：
1986-03-01
影响因子：
3.9
通讯作者：
SHIBATOMI, A
中科院分区：
文献类型：
--
作者：
NANBU, K;SAITO, J;SHIBATOMI, A
利用Nomarski衬度显微镜、扫描电子显微镜和俄歇电子能谱图像分析系统对分子束外延（MBE）生长的GaAs表面缺陷进行了分类和分析。观察到九种类型的缺陷。其中四种通常在典型的GaAs外延上观察到。典型GaAs表面缺陷的密度分布直方图显示出四个明显的峰。第一个峰值对应于中值尺寸为100 μ m 2的椭圆形缺陷。第二个峰对应于5 μ m的探测，其起源于衬底表面上的污染。第三个峰对应于10~ m2的圆形缺陷。第四峰对应于缺陷，1~ tm 2或更小，其起源于GaAs衬底中的微小不规则性，例如位错。虽然100~ m2和10~ m2的缺陷在形状上有很大的不同，但它们的密度被证明是强烈依赖于生长条件和生长轮次的数量。因此，可以推断它们是由于Ga源的不同来源，如Ga氧化物和Ga溅射。
Surface defects on GaAs grown by molecular beam epitaxy (MBE) have been classified and analyzed using an image analyzing system with Nomarski contrast microscope, a scanning electron microscopy (SEM), and an Auger electron spectroscopy (AES). Nine types of defects were observed. Four of them were usually observed on typical GaAs epitaxials. Density distribution histograms of surface defects on typical GaAs revealed four distinct peaks. The first peak corresponds to oval defects with a median size of 100~ m 2. The second peak corresponds to detects of 5~ m, which originate in contamination on the substrate surface. The third peak corresponds to circular defects of 10~ m 2. The fourth peak corresponds to defects, 1~ tm 2 or less, which originate in minute irregularities such as dislocations in the GaAs substrate. Although the defects of 100~ m 2 and of 10~ m 2 were quite different in shape from each other, their density proved to be strongly dependent on growth conditions and the number of growth runs. Therefore, it is inferred that they are due to the different origins in the Ga source such as Ga oxide and Ga spitting.