Preparation of Cubic Boron Nitride Films by RF Sputtering
Preparation of Cubic Boron Nitride Films by RF Sputtering
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DOI：
10.1143/jjap.29.l1175
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发表时间：
1990-07
影响因子：
1.5
通讯作者：
M. Mieno;T. Yoshida
中科院分区：
文献类型：
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作者：
M. Mieno;T. Yoshida
在自偏压为负、溅射气体成分为Ar/N_2的条件下，用六方氮化硼(BN)烧结靶溅射制备了立方氮化硼(c-BN)薄膜。发现只有在自偏压大于阈值的纯Ar放电条件下制备的薄膜中才含有c-BN相。此外，随着负自偏压的增大，c-BN与六方氮化硼的比例增大。主要由c-BN相组成的薄膜在空气中容易从硅衬底上剥落，这是因为它们的压应力很大。
Cubic boron nitride (c-BN) films have been prepared by sputtering of a hexagonal BN sintered target under a negative self-bias voltage applied to Si substrates and a sputtering gas composition of Ar/N2. A c-BN phase was found to be contained only in the films prepared in pure Ar discharge with a negative self-bias above a threshold value. Moreover, the ratio of c-BN to hexagonal boron nitride increased with increasing negative self-bias voltage. The films consisting mainly of the c-BN phase were easily peeled from Si substrates on exposure to air because of their strong compressive stress.