Synthesis of CuInS2, CuInSe2, and Cu(InxGa1-x)Se2 (CIGS) Nanocrystal "Inks" for Printable Photovoltaics
Synthesis of CuInS2, CuInSe2, and Cu(InxGa1-x)Se2 (CIGS) Nanocrystal "Inks" for Printable Photovoltaics
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DOI：
10.1021/ja805845q
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发表时间：
2008-12-10
影响因子：
15
通讯作者：
Korgel, Brian A.
中科院分区：
文献类型：
--
作者：
Panthani, Matthew G.;Akhavan, Vahid;Korgel, Brian A.
通过溶液中的阻滞沉淀，合成了直径从约 5 nm 到约 25 nm 的黄铜矿铜铟硫化物 (CuInS2) 和铜铟镓硒 (Cu(InxGa1-x)-Se-2; CIGS) 纳米晶体。 CIGS纳米晶体中的In/Ga比率可以通过改变反应中的In/Ga反应物比率来控制，并且CuInS2和CIGS纳米晶体的光学性质与各自块体材料的光学性质相对应。使用开发的方法来生产均匀、无裂纹的微米厚薄膜，CuInSe2 纳米晶体在原型光伏器件中进行了测试。作为概念验证，基于纳米晶体的器件表现出了可重复的光伏响应。
Chalcopyrite copper indium sulfide (CuInS2) and copper indium gallium selenide (Cu(InxGa1-x)-Se-2; CIGS) nanocrystals ranging from similar to 5 to similar to 25 nm in diameter were synthesized by arrested precipitation in solution. The In/Ga ratio in the CIGS nanocrystals could be controlled by varying the In/Ga reactant ratio in the reaction, and the optical properties of the CuInS2 and CIGS nanocrystals correspond to those of the respective bulk materials. Using methods developed to produce uniform, crack-free micrometer-thick films, CuInSe2 nanocrystals were tested in prototype photovoltaic devices. As a proof-of-concept, the nanocrystal-based devices exhibited a reproducible photovoltaic response.