Damage production yield by electron excitation in mica for ion and cluster irradiations
Damage production yield by electron excitation in mica for ion and cluster irradiations
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DOI：
10.1080/01418610108217168
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发表时间：
2001-12
期刊：
影响因子：
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通讯作者：
S. Bouffard;C. Leroy;S. Della-Negra;A. Brunelle;J. Costantini
中科院分区：
文献类型：
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作者：
S. Bouffard;C. Leroy;S. Della-Negra;A. Brunelle;J. Costantini
摘要在许多离子辐照和高能团簇辐照材料中，已经描述了高密度电子激发产生扩展缺陷的过程。用来表征这些辐照的参数通常是电子阻止能力或线性能量转移(LET)。我们用近场显微镜研究了不同速度的离子和高能团簇对云母表面的损伤产生。在给定的LET下，损伤屈服取决于离子的速度。为了描述这种速度效应，我们定义了一个简化的LET，其中只考虑了离子路径附近的电离。有了这个减小的LET，高速和低速离子辐射之间没有区别。然而，在本描述中，我们观察到来自于团簇的较低电荷的团簇照射的偏差。表面以下团簇的平均电荷可以从这个偏差中提取出来。
Abstract The production of extended defects by a high density of electron excitation has been described in many materials for ion irradiation and high-energy cluster irradiation. The parameter used to characterize these irradiations is generally the electronic stopping power or linear energy transfer (LET). We have studied the damage production at the surface of mica by near-field microscopy for irradiations by ions at different velocities and by high-energy clusters. At a given LET, the damage yield depends on the velocity of the ions. To describe this velocity effect, we define a reduced LET in which only the ionizations close to the ion path are taken into account. With this reduced LET, there is no difference between high- and low-velocity ion irradiations. However, in this description, we observe a deviation for the cluster irradiation which comes from the lower charge of the clusters. The mean charge of the clusters below the surface can be extracted from this deviation.