GaN and ZnO freestanding micromechanical structures on silicon‐on‐insulator substrates
GaN and ZnO freestanding micromechanical structures on silicon‐on‐insulator substrates
复制标题
绝缘体上硅衬底上的 GaN 和 ZnO 独立式微机械结构
DOI：
10.1002/pssa.200723611
复制
发表时间：
2008
期刊：
影响因子：
--
通讯作者：
S. Chua
中科院分区：
文献类型：
--
作者：
Sukant K. Tripathy;S. Vicknesh;Lianshan Wang;V. K. Lin;S. Oh;R. Grover;K. Zang;J. Arokiaraj;J. Tan;B. Kumar;H. Gong;S. Shannigrahi;A. Ramam;S. Chua
使用选择性干法刻蚀技术的组合，在绝缘体上硅（SOI）衬底上展示了表面微加工GaN和ZnO微机械结构。干法释放技术采用非等离子体二氟化氙（XeF2）的受控气相脉冲蚀刻，其选择性地蚀刻SOI的Si覆盖层，从而底切顶部的宽带隙半导体材料。该方法防止悬置宽带隙半导体机械结构的晶体损伤。通过显微拉曼光谱表征这些释放的微结构的机械性能。（© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
Using a combination of selective dry etching techniques, surface micro‐machined GaN and ZnO micromechanical structures are demonstrated on silicon‐on‐insulator (SOI) substrates. The dry releasing technique employs a controlled gas phase pulse etching with non‐plasma xenon difluoride (XeF2), which selectively etches the Si overlayer of SOI, thus undercutting the wide bandgap semiconductor material on top. This method prevents crystal damage of overhanging wide bandgap semiconductor mechanical structures. The mechanical properties of these released microstructures are characterized by micro‐Raman spectroscopy. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)