Modified Stranski‐Krastanov Growth in Stacked Layers of Self‐Assembled Cubic GaN/AlN Quantum Dots
Modified Stranski‐Krastanov Growth in Stacked Layers of Self‐Assembled Cubic GaN/AlN Quantum Dots
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DOI：
10.1002/1521-396x(200112)188:2
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发表时间：
2001-12
期刊：
影响因子：
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通讯作者：
E. Martinez-Guerrero;R. Beneyton;C. Adelmann;B. Daudin;L. S. Dang;G. Mula;H. Mariette
中科院分区：
文献类型：
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作者：
E. Martinez-Guerrero;R. Beneyton;C. Adelmann;B. Daudin;L. S. Dang;G. Mula;H. Mariette
在stranski - krstanov模式下生长的立方GaN/AlN岛的堆叠结构中，GaN岛的临界厚度（2D-3D过渡）在初始点层和第三点层之间减少了10倍。这种临界厚度的变化很大程度上取决于氮化铝隔离层的厚度。此外，我们系统地观察到量子点应变状态的变化和岛尺寸的增加，这取决于GaN岛层数。
In a stacked structure of cubic GaN/AlN islands grown in a Stranski-Krastanov mode, the critical thickness for the GaN islanding (2D-3D transition) decreases by a factor of up to 10 between the initial dot layer and the third one. This variation of the critical thickness is strongly dependent on the AlN spacer thickness. Moreover, we observe systematically a change of the quantum dot strain state and an increase of island size, depending on the GaN island layer number.