Simulation of a ridge-type semiconductor laser for separate confinement of horizontal transverse modes and carriers
Simulation of a ridge-type semiconductor laser for separate confinement of horizontal transverse modes and carriers
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DOI：
10.1007/s11082-012-9620-x
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发表时间：
2013-07-01
影响因子：
3
通讯作者：
Numai, Takahiro
中科院分区：
文献类型：
--
作者：
Kato, Hiroki;Yoshida, Hazuki;Numai, Takahiro
提出了一种用于水平横模和载流子分离限制的选择性质子注入包覆层脊型半导体激光器，并对其激光特性进行了模拟。光由质子注入的n包层限制，载流子由质子注入的p包层限制。结果表明，工作在基横模的光输出增强，阈值电流降低。
A ridge-type semiconductor laser with selectively proton-implanted cladding layers for separate confinement of horizontal transverse modes and carriers is proposed, and lasing characteristics are simulated. Light is confined by the proton-implanted n-cladding layer; carriers are confined by the proton-implanted p-cladding layer. It is found that light output operating in the fundamental transverse mode is enhanced and threshold current is decreased.