Device modeling and simulation of the performance of Cu(In1-x,Gax)Se2 solar cells
Device modeling and simulation of the performance of Cu(In1-x,Gax)Se2 solar cells
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DOI：
10.1016/s0038-1101(03)00289-2
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发表时间：
2004-01-01
影响因子：
1.7
通讯作者：
Anderson, TJ
中科院分区：
文献类型：
--
作者：
Song, JY;Li, SS;Anderson, TJ
对Cu(ln(1-x),Ga-x)Se-2 (CIGS)薄膜太阳能电池进行了器件建模和仿真研究。研究了各种分级带隙结构，包括空间电荷区 (SCR) 分级、背面区域分级和 CIGS 吸收层的双分级。分析了不同带隙分布的器件物理和性能参数。根据模拟结果，提出了 CIGS 太阳能电池的最佳分级带隙结构。最佳分级带隙电池的性能优于均匀带隙电池。与均匀带隙 CIGS 相比，CIGS 吸收层的 SCR 分级提高了开路电压 (V,,)，而没有显着牺牲短路电流密度 (J(sc))。背面分级增强了 V-oc 和 J(sc)。与效率为 15.42% 的均匀带隙分布相比，最佳的梯度带隙分布（例如由 SCR 梯度和背面梯度组成的双梯度）可显着提高效率，高达 19.83% AM1.5G。将模拟结果与 CIGS 电池的已发表数据进行比较，显示光电流密度-电压和量子效率特性非常一致。 (C) 2003 Elsevier Ltd. 保留所有权利。
Device modeling and simulation studies of a Cu(ln(1-x),Ga-x)Se-2 (CIGS) thin film solar cell have been carried out. A variety of graded band-gap structures, including space charge region (SCR) grading, back surface region grading, and double grading of the CIGS absorber layer, are examined. The device physics and performance parameters for different band-gap profiles were analyzed. Based on the simulation results, an optimal graded band-gap structure for the CIGS solar cell is proposed. The performance of the optimally graded band-gap cell is superior to that of the uniform bandgap cell. The SCR grading of the CIGS absorber layer improves the open-circuit voltage (V,,) without significantly sacrificing the short-circuit current density (J(sc)) compared to the uniform band-gap CIGS. The back surface grading enhances both V-oc and J(sc). An optimal graded band-gap profile, such as a double grading consisting of the SCR grading and back surface grading, improves significantly the efficiency up to 19.83% AM1.5G compared to the uniform bandgap profile with 15.42% efficiency. A comparison of the simulation results with published data for the CIGS cells shows an excellent agreement of photo-current density-voltage and quantum efficiency characteristics. (C) 2003 Elsevier Ltd. All rights reserved.