Correlation between electron trap density and hydrogen concentration in ultrathin rapidly reoxidized nitrided oxides
Correlation between electron trap density and hydrogen concentration in ultrathin rapidly reoxidized nitrided oxides
复制标题
超薄快速再氧化氮化氧化物中电子陷阱密度与氢浓度的相关性
DOI：
10.1063/1.99364
复制
发表时间：
1988
期刊：
影响因子：
--
通讯作者：
Minoru Sato
中科院分区：
文献类型：
--
作者：
T. Hori;H. Iwasaki;Y. Yoshioka;Minoru Sato
超薄氮化氧化物 (8 nm) 首次通过在干氧中在 900–1150°C 下进行灯加热快速热退火 15–200 秒进行再氧化。使用二次离子质谱法对氢浓度 [H] 进行了广泛的测量。通过高场应力下的平带电压偏移 ΔVfb 来监测电子捕获。在当前实验条件下，随着再氧化的进行，[H] 和 ΔVfb 均单调减少。我们首次发现，无论制造条件如何，ΔVfb 与 [H] 通过单一比例关系相关。这一事实证明（再氧化的）氮氧化物系统中的电子陷阱源自含氢物质。
Ultrathin nitrided oxides (8 nm) were reoxidized for the first time by lamp‐heated rapid thermal annealing in dry oxygen at 900–1150 °C for 15–200 s. Extensive measurements of hydrogen concentration [H] using secondary ion mass spectroscopy were performed. Electron trapping was monitored by flatband voltage shift ΔVfb under high‐field stress. Both [H] and the ΔVfb decrease monotonically as reoxidation proceeds in the present experimental conditions. We have found for the first time that the ΔVfb is correlated with the [H] by a single proportional relation regardless of the fabrication condition. This fact gives evidence that the electron traps in the (reoxidized) nitrided‐oxide system originate from hydrogen‐containing species.