PERPENDICULAR CURRENT MAGNETORESISTANCE IN CO/CU/NIFECO/CU MULTILAYERED MICROSTRUCTURES
PERPENDICULAR CURRENT MAGNETORESISTANCE IN CO/CU/NIFECO/CU MULTILAYERED MICROSTRUCTURES
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CO/CU/NIFECO/CU 多层微结构中的垂直电流磁阻
DOI：
10.1063/1.113507
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发表时间：
1995
期刊：
影响因子：
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通讯作者：
G. A. Prinz
中科院分区：
文献类型：
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作者：
W. Vavra;S. Cheng;A. Fink;J. Krebs;G. A. Prinz
介绍了一种垂直电流磁阻器件的光刻制造方法，该方法避免了后处理“修剪”引线的必要性。研究了磁阻特性与器件尺寸、磁层厚度和温度的关系。研究发现，在某些情况下，微结构中的电流分布随温度变化很大，导致电阻率温度系数为负。结果还表明，器件本身的磁场对磁阻性能有显著影响。
An approach is demonstrated for lithographic fabrication of perpendicular current magnetoresistance devices which avoids the necessity of postprocess ‘‘trimming’’ of electrical leads. Magnetoresistance properties are investigated as a function of device size, magnetic layer thickness, and temperature. It is found that in some cases the current distribution in the microstructures change substantially with temperature resulting in a negative temperature coefficient of resistivity. It is also shown that the devices’ own magnetic fields have a dramatic effect on magnetoresistance properties.