Monolithic Integration of E/D-Mode AlGaN/GaN MIS-HEMTs
Monolithic Integration of E/D-Mode AlGaN/GaN MIS-HEMTs
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DOI：
10.1109/led.2013.2297433
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发表时间：
2014-01
影响因子：
4.9
通讯作者：
Y. Kong;Jianjun Zhou;C. Kong;Youtao Zhang;Xun Dong;Haiyan Lu;Tangsheng Chen;N. Yang
中科院分区：
文献类型：
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作者：
Y. Kong;Jianjun Zhou;C. Kong;Youtao Zhang;Xun Dong;Haiyan Lu;Tangsheng Chen;N. Yang
针对混合信号应用演示了增强/耗尽 (E/D) 模式 AlGaN/GaN 金属绝缘体半导体高电子迁移率晶体管 (MIS-HEMT) 的单片集成。 E 模式和 D 模式器件的栅极长度分别为 0.2 μm 和 0.35 μm，测得的漏极电流分别为 496 (Vgs=+5 V) 和 720 mA/mm (Vgs=0 V)，峰值跨导分别为 147 和 131 mS/mm。小信号测量结果匹配电流增益截止频率 (fT)/最大振荡频率 (fmax)，E 模式为 29.9/55.2 GHz，D 模式器件为 27.5/47.5 GHz。制作了直接耦合FET逻辑E/D MIS-HEMT反相器和51级环形振荡器。栅极电介质的结合使逆变器能够在 5 V 电源电压 VDD 下实现 3.71 V 的大逻辑电压摆幅。用 106 个晶体管实现的 51 级环形振荡器在 VDD=5 V 时显示出 427.6 MHz 的振荡频率，对应于 23 ps 的级延迟。
Monolithic integration of enhancement/depletion (E/D)-mode AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) are demonstrated for mixed signal applications. The gate length for the E-mode and D-mode devices are 0.2 μm and 0.35 μm, respectively, and drain current of 496 (Vgs=+5 V) and 720 mA/mm (Vgs=0 V) with a peak transconductance of 147 and 131 mS/mm are measured. Small-signal measurements result matched current-gain cutoff frequency (fT)/maximum oscillation frequency (fmax) of 29.9/55.2 GHz for the E-mode and 27.5/47.5 GHz for the D-mode devices. Direct-coupled FET logic E/D MIS-HEMT inverter and 51-stage ring oscillator are fabricated. The incorporation of gate dielectric enables the inverter a large logic voltage swing of 3.71 V at a supply voltage VDD of 5 V. The 51-stage ring oscillator implemented with 106 transistors shows an oscillation frequency of 427.6 MHz at VDD=5 V, corresponding to a stage delay of 23 ps.