Van der Waals Epitaxial Growth of C60 Film on a Cleaved Face of MoS2
Van der Waals Epitaxial Growth of C60 Film on a Cleaved Face of MoS2
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C60 薄膜在 MoS2 劈面上的范德华外延生长
DOI：
10.1143/jjap.30.l1892
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发表时间：
1991
影响因子：
1.5
通讯作者：
Atsushi Koma Atsushi Koma
中科院分区：
文献类型：
--
作者：
M. Sakurai;H. Tada;Koichiro Saiki Koichiro Saiki;Atsushi Koma Atsushi Koma
用货车德瓦尔斯外延法在MoS2解理面上异质外延生长了C_（60）薄膜。C_（60）薄膜形成了主晶轴平行于衬底的密堆积结构。虽然C60晶体的晶格常数比MoS2的晶格常数大得多，但由于生长的膜与衬底之间的货车范德华型相互作用，良好的异质外延生长成为可能。
C60 film has been grown heteroepitaxially on a cleaved face of MoS2 by means of van der Waals epitaxy. The C60 film forms a close-packed structure with its principal crystal axes parallel to those of the substrate. Although the lattice constant of the C60 crystal is much larger than that of MoS2, good heteroepitaxial growth becomes possible because of the van der Waals-type interaction between the grown film and the substrate.