Cavity Q, mode volume, and lasing threshold in small diameter AlGaAs microdisks with embedded quantum dots.

Cavity Q, mode volume, and lasing threshold in small diameter AlGaAs microdisks with embedded quantum dots.
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DOI:
10.1364/oe.14.001094
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发表时间:
2005-11
期刊:
影响因子:
3.8
通讯作者:
K. Srinivasan;M. Borselli;O. Painter;A. Stintz;S. Krishna
K. Srinivasan;M. Borselli;O. Painter;A. Stintz;S. Krishna
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
K. Srinivasan;M. Borselli;O. Painter;A. Stintz;S. Krishna

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研究了嵌入量子点的微盘腔的品质因子Q、模体积V(eff)和室温激光阈值。微盘内驻波模式的有限元方法模拟揭示了Veff可以小至2(λ/n)(3),同时保持超过10(5)的辐射限制Qs。直径为2微米的微盘是在含有单层InAs量子点的AlGaAs材料中制造的,其峰值发射波长为λ = 1317 nm。对于V(eff)~2(λ/n)(3)的器件,在1.4 μ m波段用光纤锥形波导被动地测量到高达1.2 × 10 ~(5)的Q值。光泵浦产生1.3微米波段的激光发射,室温下,连续波阈值低至1微瓦的吸收泵浦功率。输出耦合的激光发射也被证明是通过使用光纤锥显着增强,与激光差分效率高达xi ~ 16%和输出耦合效率超过28%。
The quality factor (Q), mode volume (V(eff)), and room-temperature lasing threshold of microdisk cavities with embedded quantum dots (QDs) are investigated. Finite element method simulations of standing wave modes within the microdisk reveal that Veff can be as small as 2(lambda/n)(3) while maintaining radiation-limited Qs in excess of 10(5). Microdisks of diameter 2 microm are fabricated in an AlGaAs material containing a single layer of InAs QDs with peak emission at lambda = 1317 nm. For devices with V(eff) ~2 (lambda/n)(3), Qs as high as 1.2x10(5) are measured passively in the 1.4 microm band, using an optical fiber taper waveguide. Optical pumping yields laser emission in the 1.3 microm band, with room temperature, continuous-wave thresholds as low as 1 microW of absorbed pump power. Out-coupling of the laser emission is also shown to be significantly enhanced through the use of optical fiber tapers, with laser differential efficiency as high as xi ~ 16% and out-coupling efficiency in excess of 28%.