P-GAN/N-INGAN/N-GAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES
P-GAN/N-INGAN/N-GAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES
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DOI：
10.1143/jjap.32.l8
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发表时间：
1993-01-15
期刊：
影响因子：
--
通讯作者：
MUKAI, T
中科院分区：
文献类型：
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作者：
NAKAMURA, S;SENOH, M;MUKAI, T
首次成功制备了p-GaN/n-InGaN/n-GaN双异质结蓝光发光二极管。在室温下，当正向电流为20 mA时，输出功率为125 μ W，外量子效率高达0.22%.电致发光的峰值波长为440 nm，半高宽为180 meV。该值FWHM是有史以来报道的蓝色GaN LED的最小值。
P-GaN/n-InGaN/n-GaN double-heterostructure (DH) blue-light-emitting diodes LEDs were fabricated successfully for the first time. The output power was 125 muW and the external quantum efficiency was as high as 0.22% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half-maximum (FWHM) of the electroluminescence (EL) were 440 nm and 180 meV, respectively. This value FWHM of was the smallest ever reported for blue GaN LEDs.