A short-wavelength selective reach-through avalanche photodiode
A short-wavelength selective reach-through avalanche photodiode
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一种短波长选择性直通雪崩光电二极管
DOI：
10.1109/nssmic.1995.504206
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
Henri Dautet
中科院分区：
文献类型：
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作者：
R. J. McIntyre;P. P. Webb;Henri Dautet
描述了一种新的直通式雪崩光电二极管，设计用于闪烁体等短波长光的光源。该器件具有双结p/sup+/-p-n-p/sup-/-n/sup+/结构，其中包括约99%的器件厚度的中心三层被完全耗尽。P/sup+/光入射表面延伸到整个设备上，并且可以放置成与闪烁体接触。倍增p-n结被掩埋，并且位于p/sup+/-层下方约4/splµ/m处，使得只有由短波长(即，强吸收)光产生的初级光电子被完全倍增。P/sup-/-n/sup+/结或结阵列位于晶片的背面，并被保护环包围。器件120/splµ/m厚并且具有25 mm/sup/敏感面积的典型特征是在480 nm处的QE为80%，电容为30pF，工作电压为500V，响应速度为/spl sim/3 ns，噪声电流小于1pA/hz/sup 1/2/(增益为100时)，以及有效k值为0.030。
A new reach-through avalanche photodiode, designed for use with sources of short-wavelength light such as scintillators, is described. The device has a double junction p/sup +/-p-n-p/sup -/-n/sup +/ structure in which the central three layers, which comprise about 99% of the device thickness, are fully depleted. The p/sup +/ light-entry surface extends across the whole device and can be placed in contact with a scintillator. The multiplying p-n junction is buried and is located about 4 /spl mu/m below the p/sup +/-layer so that only primary photo-electrons generated by short-wavelength (i.e., strongly absorbed) light are fully multiplied. The p/sup -/-n/sup +/ junction, or array of junctions, is located at the back of the wafer and is surrounded by a guard-ring. Typical characteristics for a device 120 /spl mu/m thick and having a 25 mm/sup 2/ sensitive area, are a QE of 80% at 480 nm, a capacitance of 30 pF, operating voltage of <500 V, a speed of response of /spl sim/3 ns, a noise current of less than 1 pA/Hz/sup 1/2/ at a gain of 100, and an effective k value of 0.030.