X-ray-diffraction measurement of interface structure in GaAs/Si(001).
X-ray-diffraction measurement of interface structure in GaAs/Si(001).
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GaAs/Si(001) 界面结构的 X 射线衍射测量。
DOI：
10.1103/physrevb.43.12425
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发表时间：
1991
期刊：
影响因子：
--
通讯作者：
Morkoç
中科院分区：
文献类型：
--
作者：
Specht;Ice;Peters;Sparks;Lucas;Zhu;Moret;Morkoç
我们已经开发了一种X射线衍射技术，它可以对厚的、未对准的薄膜的近界面区域提供深度敏感性。通过测量沿Si(00{italGaN})衬底晶体截断棒的强度分布，比较了Si/GaAs界面上的衍射场与基于失配位错网格的模型。我们发现界面原子的均方根位移值为1.09±0.10A，界面的粗糙度为2.9±1.0A。衍射结果表明，在界面附近的GaAs中，垂直于界面的应变异常小。
We have developed an x-ray-diffraction technique that provides depth sensitivity to the near-interface region of a thick, nonregistered film. By measuring the intensity profiles along the Si(00{ital l}) substrate crystal truncation rods, we compare the diffraction from the Si/GaAs interface with a model based on a grid of misfit dislocations. We find that the interface atoms have a root-mean-square displacement of 1.09{plus minus}0.10 A and that the interface has a roughness of 2.9{plus minus}1.0 A. The diffraction indicates an anomalously small strain perpendicular to the interface in the GaAs near the interface.