Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method
Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method
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DOI：
10.1143/jjap.47.8506
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发表时间：
2008-11-01
影响因子：
1.5
通讯作者：
Yaguchi, Yoichi
中科院分区：
文献类型：
--
作者：
Aida, Hideo;Nishiguchi, Kengo;Yaguchi, Yoichi
证明了通过边缘限定的薄膜馈送生长（EFG）方法成功生长2英寸β-Ga 2 O3晶体。详细讨论了β-Ga_2 O_3单晶生长条件的优化。籽晶温度和颈宽是影响单晶生长的最重要因素。对β-Ga 2 O3晶体进行X射线摇摆曲线测量，以估计生长晶体的位错密度。还使用KOH溶液测量β-Ga 2 O3晶体的蚀刻坑密度（EPD）以测量位错密度。结合颈宽等晶体生长参数对实验结果进行了讨论，从唯象学和晶体学的角度阐明了位错在晶体中的传播机制和起源。[DOI 10.1143/JJAP.47.8506]
The successful growth of 2-in, beta-Ga2O3 crystals by the edge-defined, film fed growth (EFG) method was demonstrated. The optimization of growth conditions for larger single crystalline beta-Ga2O3 is discussed in detail. The seeding conditions of temperature and neck width were found to be the most important factors to grow single crystals. X-ray rocking curve measurements of beta-Ga2O3 crystals were conducted to estimate the dislocation densities of the grown crystals. Etch pit densities (EPDs) of the beta-Ga2O3 crystals were also measured using KOH solution to measure the dislocation densities. The results were discussed combining with crystal growth parameters such as neck width to clarity the mechanisms of propagation and the origin of dislocations in crystals from phenomenological and crystallographic points of view. [DOI: 10.1143/JJAP.47.8506]