SiC nanodot formation in amorphous-Si and poly-Si substrates using a hot-C+-ion implantation technique
SiC nanodot formation in amorphous-Si and poly-Si substrates using a hot-C+-ion implantation technique
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DOI：
10.7567/1347-4065/aafb4e
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发表时间：
2019-02
影响因子：
1.5
通讯作者：
T. Mizuno;R. Kanazawa;T. Aoki;T. Sameshima
中科院分区：
文献类型：
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作者：
T. Mizuno;R. Kanazawa;T. Aoki;T. Sameshima
采用热C+离子注入技术和N2退火工艺，对石英衬底上非晶硅（a-Si）和多晶硅（poly-Si）中SiC纳米点的形成进行了实验研究，并与绝缘体衬底上（100）晶硅（c-Si）中SiC纳米点的形成进行了比较。即使在C+离子注入a-Si和poly-Si层的晶体质量差的衬底中，我们也通过透射电子显微镜实验验证了3C-SiC点的形成，以及近紫外-维斯区的强光致发光（PL）强度，因为a-Si通过热c+离子注入和后N2退火的高温过程部分多晶化。PL谱线的形状强烈依赖于Si的晶体结构，但N2退火后的峰值PL强度几乎与Si的晶体结构无关。此外，PL光谱可以解释从不同的立方和六方SiC多型体的PL发射的总和。我们澄清了三种Si晶体结构对SiC多型体的PL分量具有不同的贡献率。
We experimentally studied SiC nanodot formation in an amorphous-Si (a-Si) and poly-Si on quartz substrates, using a hot-C+-ion implantation technique and post-N2 annealing, compared with SiC-dots in a (100) crystal-Si (c-Si) on insulator substrate. Even in the poor crystal quality substrates of the C+-ion implanted in a-Si and poly-Si layers, we experimentally verified 3C-SiC dot formation by transmission electron microscopy, and the strong photoluminescence (PL) intensity in the near-UV-vis regions, because a-Si is partially poly-crystallized by the high-temperature processes of hot-C+-ion implantation and post-N2 annealing. The PL spectral line shape strongly depends on the Si crystal structures, but the peak PL intensity after N2 annealing is almost independent of the Si crystal structures. Moreover, the PL spectrum can be explained by the sum of PL emissions from different cubic and hexagonal polytypes of SiC. We clarified that the three Si crystal structures have a different contribution ratio of PL components of SiC polytypes.