Fundamental Oscillation up to 1.42 THz in Resonant Tunneling Diodes by Optimized Collector Spacer Thickness
Fundamental Oscillation up to 1.42 THz in Resonant Tunneling Diodes by Optimized Collector Spacer Thickness
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DOI：
10.1007/s10762-014-0058-z
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发表时间：
2014-02
期刊：
影响因子：
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通讯作者：
H. Kanaya;R. Sogabe;T. Maekawa;S. Suzuki;M. Asada
中科院分区：
文献类型：
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作者：
H. Kanaya;R. Sogabe;T. Maekawa;S. Suzuki;M. Asada
我们报告的太赫兹振荡器的振荡频率增加，使用AlAs/InGaAs双势垒共振隧穿二极管（RTD）通过优化集电极间隔层的厚度。对于RTD的高频振荡，电子延迟时间，这是由在谐振区的停留时间和在集电极耗尽区的渡越时间，必须减少。虽然通过薄的集电极间隔物减少了渡越时间，但电容增加。因此，存在集电器间隔层的最佳厚度。在这份报告中，我们调查的振荡频率上的集电极间隔厚度的依赖关系。RTD与20 μ m长的缝隙天线集成，并且对于25、12和6 nm的间隔物厚度，分别获得了高达1.1、1.42和1.29 THz的振荡。高频振荡的最佳间隔物厚度为12 nm左右。实验中最高频率为1.42 THz，输出功率约为1 μW。我们还从延迟时间对收集极间隔层厚度的依赖关系中提取了收集极耗尽区的电子速度和停留时间。
We report an increase in the oscillation frequency of terahertz oscillators using AlAs/InGaAs double-barrier resonant tunneling diodes (RTDs) by optimizing the collector spacer thickness. For high-frequency oscillation of RTDs, the electron delay time, which is composed of the dwell time in the resonance region and the transit time in the collector depletion region, must be reduced. Although the transit time is reduced by a thin collector spacer, the capacitance increases. Thus, an optimum thickness of collector spacer layer exists. In this report, we investigate the dependence of oscillation frequency on the collector spacer thickness. The RTDs were integrated with 20-μm-long slot antennas, and oscillations up to 1.1, 1.42, and 1.29 THz were obtained for spacer thicknesses of 25, 12, and 6 nm, respectively. The optimum spacer thickness for high-frequency oscillation was around 12 nm. The highest frequency in this experiment was 1.42 THz oscillation, with an output power of ~1 μW. We also extracted the electron velocity in the collector depletion region and the dwell time from the dependence of the delay time on the collector spacer thickness.