Thickness‐Dependent Dielectric, Ferroelectric, and Magnetodielectric Properties of BiFeO3 Thin Films Derived by Chemical Solution Deposition
Thickness‐Dependent Dielectric, Ferroelectric, and Magnetodielectric Properties of BiFeO3 Thin Films Derived by Chemical Solution Deposition
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DOI：
10.1111/j.1551-2916.2011.04920.x
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发表时间：
2012-02
影响因子：
3.9
通讯作者：
Xianwu Tang;J. Dai;Xuebin Zhu;Jianchao Lin;Q. Chang;Dajun Wu;W. Song;Yuping Sun
中科院分区：
文献类型：
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作者：
Xianwu Tang;J. Dai;Xuebin Zhu;Jianchao Lin;Q. Chang;Dajun Wu;W. Song;Yuping Sun
厚度是控制BiFeO 3多铁性薄膜微观结构和物理性能的重要参数。本文采用化学溶液沉积法在Pt/Ti/SiO2/Si（100）衬底上制备了不同厚度（210 ~ 830 nm）的BiFeO 3薄膜，系统地研究了薄膜的厚度效应。结果表明，随着薄膜厚度的增加，薄膜的晶化程度提高，介电常数增大，漏电流减小。另一方面，磁化强度和磁介电随厚度减小。结果表明，采用化学溶液沉积法制备BiFeO 3薄膜时，薄膜厚度应控制在400-600 nm之间，以获得最佳的性能，这对制备BiFeO 3多铁性薄膜具有一定的指导意义。
Thickness is a very important parameter to control the microstructures, as well as physical properties in the multiferroic BiFeO3thin films. In this article, BiFeO3thin films with different thickness (from 210 to 830 nm) are fabricated by chemical solution deposition on the Pt/Ti/SiO2/Si (100) substrates to investigate the thickness effects systematically. The results show that the crystallization is improved, the dielectric constant is enhanced, and the leakage current is reduced with increasing thickness. On the other hand, the magnetization and magnetodielectric are decreased with thickness. The results show that the optimized thickness should be within the range of 400–600 nm to obtain optimized properties using chemical solution deposition processing, which will provide a useful guidance to prepare the multiferroic BiFeO3thin films.