Hybrid III-V/IV Nanowires: High-Quality Ge Shell Epitaxy on GaAs Cores.
Hybrid III-V/IV Nanowires: High-Quality Ge Shell Epitaxy on GaAs Cores.
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DOI：
10.1021/acs.nanolett.8b02760
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发表时间：
2018-09
期刊：
影响因子：
10.8
通讯作者：
Haotian Zeng;Xuezhe Yu;Aruni Fonseka;James A. Gott;M. Tang;Yunyan Zhang;Giorgos Boras;Jia Xu;A. Sánchez;Huiyun Liu
中科院分区：
文献类型：
--
作者：
Haotian Zeng;Xuezhe Yu;Aruni Fonseka;James A. Gott;M. Tang;Yunyan Zhang;Giorgos Boras;Jia Xu;A. Sánchez;Huiyun Liu
光学活性III-V族和电子适合的IV族材料在同一纳米线上的集成可以为纳米尺度的光子学和电子学的结合提供巨大的潜力。在这封信中，我们演示了GaAs/Ge核壳纳米线的生长在Si衬底上的分子束外延和研究的径向和轴向Ge外延GaAs纳米线详细。高品质的核-壳纳米线具有光滑的侧面和无位错，尖锐的界面实现。结果发现，低壳生长温度导致更平滑的侧面，而较高的壳生长温度导致更宽松的结构，具有显着的多面侧壁。还揭示了使用Ga液滴在GaAs纳米线的轴向方向上形成具有Ge部分发展的III-V/IV异质结构纳米线的可能性。这些纳米线提供了一个理想的平台，纳米III-V/IV组合，这是有前途的高度集成的光子和电子混合器件在一个单一的芯片上。
The integration of optically active III-V and electronic-suitable IV materials on the same nanowire could provide a great potential for the combination of photonics and electronics in the nanoscale. In this Letter, we demonstrate the growth of GaAs/Ge core-shell nanowires on Si substrates by molecular beam epitaxy and investigate the radial and axial Ge epitaxy on GaAs nanowires in detail. High-quality core-shell nanowires with smooth side facets and dislocation-free, sharp interfaces are achieved. It is found that the low shell growth temperature leads to smoother side facets, while higher shell growth temperatures lead to more relaxed structures with significantly faceted sidewalls. The possibility of forming a III-V/IV heterostructure nanowire with a Ge section development in the axial direction of a GaAs nanowire using a Ga droplet is also revealed. These nanowires provide an ideal platform for nanoscale III-V/IV combination, which is promising for highly integrated photonic and electronic hybrid devices on a single chip.