Si+ implantation: A pretreatment method for diamond nucleation on a Si wafer
Si+ implantation: A pretreatment method for diamond nucleation on a Si wafer
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DOI：
10.1063/1.113731
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发表时间：
1995-06
影响因子：
4
通讯作者：
Jie Yang;Xia Su;Qijin Chen;Zhangda Lin
中科院分区：
文献类型：
--
作者：
Jie Yang;Xia Su;Qijin Chen;Zhangda Lin
通过热丝化学气相沉积方法在硅片上获得了金刚石薄膜。采用Si+离子束（离子能量25keV，注入剂量2×1017Si/cm2）对衬底进行预注入。 X射线衍射、扫描电子显微镜和拉曼光谱用于表征合成薄膜的结构。已经讨论了硅晶片上金刚石成核的机制。表面应力被认为是硅晶片上低压金刚石成核的最重要因素之一。
Diamond films have been obtained by the hot‐filament chemical vapor deposition method on a silicon wafer. The substrates were preimplanted by a Si+ ion beam (ion energy 25 keV, implantation dosage 2×1017 Si/cm2). X‐ray diffraction, scanning electron microscopy, and Raman spectroscopy were used to characterize the structure of the synthesized films. The mechanisms for diamond nucleation on a Si wafer have been discussed. Surface stress is believed to be one of the most important factors for low pressure diamond nucleation on the Si wafer.