Unconventional Upright Layer Orientation and Considerable Enhancement of Proton-Electron Conductivity in Dion-Jacobson Perovskite Thin Films
Unconventional Upright Layer Orientation and Considerable Enhancement of Proton-Electron Conductivity in Dion-Jacobson Perovskite Thin Films
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迪翁-雅各布森钙钛矿薄膜中非常规的直立层取向和质子-电子电导率的显着增强
作者：
中島智彦;小林清;篠田健太郎;土屋哲男
准分子激光辅助金属有机物沉积是一种简单的生长单轴取向Dion-Jacobson钙钛矿薄膜的方法。我们已经证实，在非晶玻璃基板上，狄昂-雅各布森相通常结晶，并成为层堆叠有序的取向，例如，在RbLa_2Ti_2NbO_（10）和RbLaNb_2O_7薄膜下KrF激光照射。在这里，我们观察到一个独特的取向在RbCa 2Nb 3 O 10薄膜，几乎完美的直立层状结构上实现非晶玻璃基板。前体RbCa 2Nb 3 O 10薄膜在KrF激光照射下以单轴（100）取向结晶，能量密度高于100 mJ cm-2，并且优选（100）和（001）取向低于100 mJ cm-2。得到的（100）取向的RbCa 2Nb 3 O 10薄膜在400 °C下显示出4.9 × 10−2 S cm−1的极高质子-电子电导率。
Excimer-laser-assisted metal organic deposition is a straightforward process for growing uniaxially oriented Dion–Jacobson perovskite thin films. We have confirmed that on amorphous glass substrates, Dion–Jacobson phases normally crystallize and become oriented with layer-stacking ordering, for example, in RbLa2Ti2NbO10 and RbLaNb2O7 thin films under KrF laser irradiation. Here, we observed a unique orientation in RbCa2Nb3O10 thin films, where almost perfect upright layered structures were realized on amorphous glass substrates. The precursor RbCa2Nb3O10 thin film crystallized in uniaxial (100)-orientation under KrF laser irradiation with a fluence above 100 mJ cm−2 and with a preference for (100)- and (001)-orientations below 100 mJ cm−2. The obtained (100)-oriented RbCa2Nb3O10 thin films showed an extremely high proton–electron conductivity of 4.9 × 10−2 S cm−1 at 400 °C.