Reactive ion etching of niobium in SF6/O2 to produce sloped sidewall profiles
Reactive ion etching of niobium in SF6/O2 to produce sloped sidewall profiles
复制标题
在 SF6/O2 中对铌进行反应离子蚀刻以产生倾斜的侧壁轮廓
DOI：
10.1116/1.578650
复制
发表时间：
1993
期刊：
影响因子：
--
通讯作者：
H. Mantle
中科院分区：
文献类型：
--
作者：
B. J. Curtis;H. Mantle
约瑟夫森结的应用之一是它们以阵列形式用作直流电压标准。目前受到关注的一种类型的隧道结是由Nb-AlOx-Nb组成的三明治。文献中有许多关于Nb的刻蚀和刻蚀结构的轮廓控制的报道；例如，在使用CF4/O2混合物或Cl2/CHCl3混合物时，获得了倾斜的轮廓。本文描述了在SF6/02混合物中反应离子刻蚀Nb以产生倾斜的侧壁轮廓。
Among the applications of Josephson junctions is their use, in array form, as a dc voltage standard. One type of tunnel junction that is currently receiving attention is a sandwich consisting of Nb-AlO x -Nb. There are a number of reports in the literature concerning the etching of Nb and profile control of the etched structures; for example, sloped profiles were obtained in using a CF 4 /O 2 mixture or with a Cl 2 /CHCl 3 mixture. This note describes the reactive ion etching of niobium in an SF 6 /0 2 mixture to produce a sloping sidewall profile.