Electron diffraction radial distribution function analysis of amorphous boron carbide synthesized by ion beam irradiation and chemical vapor deposition
Electron diffraction radial distribution function analysis of amorphous boron carbide synthesized by ion beam irradiation and chemical vapor deposition
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离子束辐照和化学气相沉积合成非晶碳化硼的电子衍射径向分布函数分析
DOI：
10.1016/j.jeurceramsoc.2021.10.020
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发表时间：
2022
影响因子：
5.7
通讯作者：
Nastasi Michael
中科院分区：
文献类型：
--
作者：
Ishimaru Manabu;Nakamura Ryusuke;Zhang Yanwen;Weber William J.;Peterson George G.;Ianno Natale J.;Nastasi Michael
非晶态碳化硼(a-BxC)网络由轻元素组成，原子散射因子较低，难以用X射线衍射法进行结构分析。由于物质与电子之间的强相互作用，电子衍射在探测轻元素方面具有优势。我们利用离子束技术和等离子体增强化学气相沉积技术制备了a-BxC，并用由电子衍射强度分布得到的原子对分布函数表征了它们的结构。研究发现，在离子辐照生成的a-B4C中，五方锥体是最有利的团簇，而沉积的a-BxC薄膜中形成了C单键C同核键。X-射线光电子能谱表明，a-BxC薄膜比B4C薄膜含有更多的碳，这是形成同核键的原因。
Amorphous boron carbide (a-BxC) networks consist of light elements, and their low atomic scattering factors makes structural analysis by x-ray diffraction difficult. Electron diffraction has an advantage of detecting the light elements, because of the strong interaction between the matter and electrons. We prepared a-BxC by ion beam technologies and plasma-enhanced chemical vapor deposition, and characterized their structures via atomic pair-distribution functions derived from electron diffraction intensity profiles. It was found that a pentagonal pyramid is the most favorable cluster in a-B4C generated by ion irradiation, while Csingle bondC homonuclear bonds were formed in the deposited a-BxC thin film. X-ray photoemission spectroscopy revealed that the a-BxC thin film possesses more carbon than B4C, which is responsible for the formation of the homonuclear bonds.