Variable strain energy in amorphous silicon
Variable strain energy in amorphous silicon
复制标题
非晶硅中的可变应变能
DOI：
10.1557/jmr.1988.1201
复制
发表时间：
1988
期刊：
影响因子：
--
通讯作者：
F. Saris
中科院分区：
文献类型：
--
作者：
W. Sinke;S. Roorda;F. Saris
结合 a-Ge 的量热测量，回顾并讨论了 a-Si 和 a-Ge 结构弛豫的不同拉曼实验。基于a-Ge拉曼光谱结果与量热法结果之间的相关性以及a-Si和a-Ge在拉曼光谱方面的高度相似性，表明a-Si中的应变能可能随制备条件和后续处理而发生很大变化。在此假设下，针对不同初始弛豫状态的材料构建了 a-Si 吉布斯自由能与温度的关系。结果表明，当熔化前的加热阶段发生弛豫时，非晶硅的熔化温度应升高。因此，可以解释在不同激光加热条件下观察到的表观熔化温度的差异。
Different Raman experiments on structural relaxation of a -Si and a -Ge are reviewed and discussed in relation to calorimetric measurements on a -Ge. On the basis of the correlation found between results from Raman spectroscopy and results from calorimetry in the case of a -Ge and of the strong similarity between a -Si and a -Ge in terms of their Raman spectra, it is suggested that the strain energy in a -Si may vary considerably with preparation conditions and subsequent treatments. Under this assumption the a -Si Gibbs free energy versus temperature has been constructed for material in different initial states of relaxation. It is shown that the melting temperature of amorphous silicon should increase when relaxation occurs during the heating phase prior to melting. Thus differences in apparent melting temperature, as observed under different laser heating conditions, may be explained.