Band gap engineering based on MgxZn1-xO and CdyZn1-yO ternary alloy films
Band gap engineering based on MgxZn1-xO and CdyZn1-yO ternary alloy films
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DOI：
10.1063/1.1350632
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发表时间：
2001-02-26
影响因子：
4
通讯作者：
Koinuma, H
中科院分区：
文献类型：
--
作者：
Makino, T;Segawa, Y;Koinuma, H
研究了用脉冲激光沉积法制备的MgxZn1-xO和CdyZn1-yO II-VI氧化合金的结构和光学性能。在蓝宝石（0001）衬底上外延生长出c轴取向的（Mg,Zn）O和（Cd,Zn）O单相合金薄膜。镁和镉的最大浓度（x = 0.33, y = 0.07）显著大于热力学溶解度极限。在室温下，带隙能从3.0 （y = 0.07）系统地变化到4.0 eV （x = 0.33）。利用cd0.07 zn0.930和mg0.33 zn0.67分别将4.2 K下的光致发光峰值能量从3.19 eV调谐到3.87 eV。a轴的晶格常数是两种合金浓度的单调递增函数。在晶格匹配的ScAlMgO4衬底上生长Cd0.01Zn0.99O，测定了激子-声子耦合强度。(C) 2001年美国物理研究所。
We describe the structural and optical properties of II-VI oxide alloys, MgxZn1-xO and CdyZn1-yO, grown by pulsed-laser deposition. Single-phase alloyed films of (Mg,Zn)O and (Cd,Zn)O with c-axis orientations were epitaxially grown on sapphire (0001) substrates. The maximum magnesium and cadmium concentrations (x = 0.33 and y = 0.07, respectively) were significantly larger than the thermodynamic solubility limits. The band gap energies systematically changed from 3.0 (y = 0.07) to 4.0 eV (x = 0.33) at room temperature. The photoluminescence peak energy deduced at 4.2 K could be tuned from 3.19 to 3.87 eV by using Cd0.07Zn0.93O and Mg0.33Zn0.67O at both ends, respectively. The lattice constants of the a axis were monotonically increasing functions of the concentrations of both alloys. The exciton-phonon coupling strength was determined in Cd0.01Zn0.99O grown on a lattice-matched ScAlMgO4 substrate. (C) 2001 American Institute of Physics.