High-speed epitaxial growth of(100)-oriented CeO_2 film on r-cut sapphire by laser chemical vapor deposition
High-speed epitaxial growth of(100)-oriented CeO_2 film on r-cut sapphire by laser chemical vapor deposition
复制标题
激光化学气相沉积在R切蓝宝石上高速外延生长(100)取向CeO_2薄膜
DOI：
10.1016/j.surfcoat.2011.02.062
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发表时间：
2011
影响因子：
5.4
通讯作者：
T. Goto
中科院分区：
文献类型：
--
作者：
P. Zhao;A. Ito;R. Tu;T. Goto
采用激光化学气相沉积法在r切蓝宝石（（11 <$02）Al 2 O3）上制备了（100）取向的CeO 2薄膜，激光功率为123 ~ 182 W，沉积温度为1042 ~ 1122 K。（100）CeO 2薄膜在（11 '02）Al 2 O3衬底上外延生长，面内取向关系为CeO 2 [010] //Al 2 O3 [1' 101]和CeO 2 [001] //Al 2 O3 [112 '0]。CeO 2薄膜的表面形貌特征为具有截锥形帽的细长晶粒。CeO 2薄膜的沉积速率为10-15μmh−1，比传统的金属有机化学气相沉积高出约10-15倍。
(100)-oriented CeO2film was prepared on r-cut sapphire ((11¯02)Al2O3) by laser chemical vapor deposition at laser powers from 123 to 182W with deposition temperatures ranging from 1042 to 1122K. The (100) CeO2films grew epitaxially on (11¯02)Al2O3substrate with the in-plane orientation relationship of CeO2[010] // Al2O3[1¯101] and CeO2[001] // Al2O3[112¯0]. The surface morphology of the CeO2films was characterized by elongated grains with truncated pyramidal cap. The deposition rate of the CeO2film was 10–15μmh−1, about 10–15 times higher than those of conventional metalorganic CVD.