The Secret Ingredient for Exceptional Contact-Controlled Transistors
The Secret Ingredient for Exceptional Contact-Controlled Transistors
复制标题
DOI：
10.1002/aelm.202101101
复制
发表时间：
2021-12-15
影响因子：
6.2
通讯作者：
Sporea, Radu A.
中科院分区：
文献类型：
--
作者：
Bestelink, Eva;Zschieschang, Ute;Sporea, Radu A.
接触控制晶体管正迅速普及。然而，仅仅作为具有低漏极电流和降低的有效迁移率的薄膜晶体管，简单地使用整流源极接触常常导致不令人满意的操作。这可能会导致原本有希望的实验被放弃。在这里，结合最近在多晶硅，有机和氧化物半导体中制造的器件，分析了文献中的数据，突出了实现良好饱和的主要因素，即保持饱和系数γ远低于0.3。次优的电气特性的次要原因进行了讨论。这些替代器件结构的正确设计将加速它们在新兴传感器电路中的高增益、低频应用。
Contact-controlled transistors are rapidly gaining popularity. However, simply using a rectifying source contact often leads to unsatisfactory operation, merely as a thin-film transistor with low drain current and reduced effective mobility. This may cause otherwise promising experiments to be abandoned. Here, data from literature is analyzed in conjunction with devices that have been recently fabricated in polysilicon, organic and oxide semiconductors, highlighting the main factor in achieving good saturation, namely keeping saturation coefficient gamma well below 0.3. Secondary causes of suboptimal electrical characteristics are also discussed. Correct design of these alternative device structures will expedite their adoption for high gain, low-frequency applications in emerging sensor circuits.