High resolution measurement of localized-state distributions from transient photoconductivity in amorphous and polymeric semiconductors
High resolution measurement of localized-state distributions from transient photoconductivity in amorphous and polymeric semiconductors
复制标题
非晶态和聚合物半导体中瞬态光电导的局域态分布的高分辨率测量
DOI：
10.1063/1.371474
复制
发表时间：
1999
影响因子：
3.2
通讯作者：
H. Naito
中科院分区：
文献类型：
--
作者：
T. Nagase;K. Kishimoto;H. Naito
利用Tikhonov正则化方法提高了非晶和聚合物半导体定域态分布测量方法的能量分辨率。该方法是基于使用拉普拉斯变换的瞬态光电导数据的分析，是有效的前和postmonolecular复合制度的瞬态光电导。的能量分辨率的改善示出使用瞬态光电导数据数值生成的模型局部化状态分布适合的材料。此外，从飞行时间瞬态光电流的局域态分布的测量检查。该方法具有改进的能量分辨率的适用性证明为未掺杂的氢化非晶硅，聚（对苯乙炔）和聚（甲基苯基硅烷）。
The energy resolution of a method for measuring localized-state distributions in amorphous and polymeric semiconductors has been improved in terms of Tikhonov regularization. The method is based on the analysis of transient photoconductivity data using Laplace transforms, and is valid for both pre- and postmonomolecular recombination regimes of the transient photoconductivity. The improvement of the energy resolution is shown using transient photoconductivity data numerically generated from model localized-state distributions appropriate for the materials. In addition, the measurement of localized-state distributions from time-of-flight transient photocurrents is examined. The applicability of the method with improved energy resolution is demonstrated for undoped hydrogenated amorphous silicon, poly(para-phenylene vinylene) and poly(methylphenylsilane).