Substrate Temperature Dependence of the Photoresist Removal Rate Using Atomic Hydrogen Generated by a Hot-Wire Tungsten Catalyst
Substrate Temperature Dependence of the Photoresist Removal Rate Using Atomic Hydrogen Generated by a Hot-Wire Tungsten Catalyst
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使用热丝钨催化剂产生的原子氢去除光刻胶的速率与基材温度的关系
DOI：
10.1143/jjap.49.016701
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发表时间：
2010
影响因子：
1.5
通讯作者：
H. Umemoto
中科院分区：
文献类型：
--
作者：
Masashi Yamamoto;T. Maruoka;A. Kono;H. Horibe;H. Umemoto
代替使用化学品的光致抗蚀剂去除方法，我们研究了使用通过与热线钨催化剂接触分解氢分子而产生的原子氢的环境友好的去除方法。我们将催化剂与光刻胶衬底（DCS）之间的距离设置为20、60、100和120 mm，并评估了在每个DCS处光刻胶与原子氢之间的反应的表观活化能（EAP）。EAP由光致抗蚀剂去除速率相对于平均衬底温度的Arrhenius图确定。当DCS为20和60 mm时，EAP随着催化剂温度的增加而降低（WT=2040-2420 °C），并且不是恒定的。然而，当DCS为100和120 mm时，EAP几乎恒定在19 ±1 kJ/mol，而不依赖于WT。光致抗蚀剂与氢原子反应的活化能约为19 kJ/mol。
Instead of photoresist removal methods using chemicals, we investigated an environmentally friendly removal method using atomic hydrogen generated by decomposing hydrogen molecules by contact with a hot-wire tungsten catalyst. We set the distance between the catalyst and the photoresist substrate (DCS) at 20, 60, 100 and 120 mm and evaluated the apparent activation energy (EAP) for the reaction between photoresist and atomic hydrogen at each DCS. The EAP was determined from Arrhenius plots of the photoresist removal rate against the average substrate temperature. When DCS was 20 and 60 mm, EAP decreased with increasing catalyst temperature (WT=2040–2420 °C) and was not constant. However, when DCS was 100 and 120 mm, EAP was nearly constant at 19 ±1 kJ/mol without depending on WT. We might obtain the activation energy of about 19 kJ/mol in the reaction of photoresist with atomic hydrogen.
加热钨丝上激活的 H_2 的旋转和振动状态分布
DOI：
--
发表时间：
2006
期刊：
J. Appl. Phys. 99, [4]
影响因子：
--
作者：
S.Kondo;K.Hashimoto;H.Tachikawa;H.Umemoto et al.
通讯作者：
H.Umemoto et al.