XPS Studies of PZT Films Deposited by Metallic Lead and Ceramic PZT Dual Target Co-Sputtering
XPS Studies of PZT Films Deposited by Metallic Lead and Ceramic PZT Dual Target Co-Sputtering
复制标题
金属铅与陶瓷PZT双靶共溅射PZT薄膜的XPS研究
DOI：
10.1007/s10832-004-5074-2
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发表时间：
2004
影响因子：
1.7
通讯作者：
J. He
中科院分区：
文献类型：
--
作者：
W. L. Chang;J. He
利用XPS研究了用陶瓷PZT和金属Pb双靶材料射频磁控共溅射制备的PZT薄膜的组成元素的化学状态与Ar+刻蚀时间的关系。PZT中的金属铅、氧化铅和铅导致了铅线结合能的不同。金属Pb相对于体Pb的结合能强度随薄膜厚度的增加而增大。O 1选择子的峰位和谱线形状与Pb、Ti和Zr原子与O 1的结合能不同以及Ti-O、Zr-O和Pb-O中O 1键的软化有关。PZT薄膜中较宽的Ti_（2 p）~（3/2）谱线可能与Ti的不同电荷状态有关，随着Ar ~+离子溅射时间的增加，没有观察到Ti_（2 p）和Zr_（3d）谱线的变化。
The dependence of the chemical states of the constituent elements of a PZT thin film prepared by RF magnetron co-sputtering using ceramic PZT and metallic Pb dual target materials on the Ar+etching time was studied using XPS. The metallic Pb, lead oxide and Pb in PZT led to the different binding energies of the Pb lines. The intensity of binding energy of metallic Pb relative to that of bulk Pb increased with the depth of the film. The peak position and the line shape of the O1selectron was associated with the different binding energies of oxygen, which interacts with Pb and Ti and Zr atoms to form the metal oxides, and the softening of the O1sbonds by the bonding interaction in Ti–O, Zr–O and Pb–O. The broad Ti2p3/2line in the PZT film could has been associated with the various charge state of Ti and no spectral changes of Ti2pand Zr3dwere observed as the Ar+ion sputtering time was increased.