Demonstration of a thermoelectric device using electric double-layer gating: Simultaneous control of the thermoelectric properties of p-type and n-type carbon nanotubes
Demonstration of a thermoelectric device using electric double-layer gating: Simultaneous control of the thermoelectric properties of p-type and n-type carbon nanotubes
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DOI：
10.1063/5.0031247
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发表时间：
2021-01
影响因子：
3.2
通讯作者：
T. Fujii
中科院分区：
文献类型：
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作者：
T. Fujii
为了制备用于热电器件的p型和n型对，将双电层电容结构应用于半导体单壁碳纳米管(SWCNT)薄片。通过改变填充离子液体的电极之间的栅极电压来控制正、负SWCNT电极(沟道)的载流子浓度。测量了沟道的漏极电流和热电势随栅极电压的变化，发现两个沟道的漏极电流随栅电压的增大而急剧增加。在正、负通道中分别观察到正、负热电势。这些结果表明，在沟道中诱导了空穴和电子载流子。我们的结论是，利用电双层栅控可以同时优化p型和n型半导体单壁碳纳米管的热电性能。
To fabricate a p-type and n-type pair for a thermoelectric device, an electric double-layer capacitor structure was applied to semiconducting single-walled carbon nanotube (SWCNT) sheets. The carrier concentration of the positive and negative SWCNT electrodes (channels) was controlled by changing the gate voltage applied between electrodes filled with an ionic liquid. The drain current and the thermopower of the channels were measured as a function of the gate voltage, and the drain current of both channels was found to drastically increase with the gate voltage. Positive and negative thermopower was observed in the positive and negative channels, respectively. These results indicate that hole and electron carriers were induced in the channels. We conclude that it is possible to simultaneously optimize the thermoelectric properties of p-type and n-type semiconducting SWCNTs using electric double-layer gating.