Lasing in direct-bandgap GeSn alloy grown on Si
Lasing in direct-bandgap GeSn alloy grown on Si
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DOI：
10.1038/nphoton.2014.321
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发表时间：
2015-02-01
期刊：
影响因子：
35
通讯作者：
Gruetzmacher, D.
中科院分区：
文献类型：
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作者：
Wirths, S.;Geiger, R.;Gruetzmacher, D.
大规模的光电子集成受到硅不能有效发光的限制(1)，因为硅和化学上匹配得很好的Ge是间接带隙半导体。为了克服这一缺点，人们已经探索了几种方法，如全光硅拉曼激光器(2)和在Si3-7上异质集成直接带隙III-V激光器。在这里，我们报道了在没有机械引入应变(9，10)的情况下，通过将Ge与Sn8合金化而创建的直接带隙IV族系统中的激光。随着温度的降低，直接跃迁产生的光致发光增强是基本直接带隙半导体的特征。对于T
Large-scale optoelectronics integration is limited by the inability of Si to emit light efficiently(1), because Si and the chemically well-matched Ge are indirect-bandgap semiconductors. To overcome this drawback, several routes have been pursued, such as the all-optical Si Raman laser(2) and the heterogeneous integration of direct-bandgap III-V lasers on Si3-7. Here, we report lasing in a direct-bandgap group IV system created by alloying Ge with Sn-8 without mechanically introducing strain(9,10). Strong enhancement of photoluminescence emerging from the direct transition with decreasing temperature is the signature of a fundamental direct-bandgap semiconductor. For T