A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based stacking
A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based stacking
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DOI：
10.1109/isscc.2011.5746413
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
Jung-Sik Kim;C. Oh;Hocheol Lee;Donghyuk Lee;H. Hwang;S. Hwang;Byongwook Na;Joungwook Moon;Jin-Guk Kim;Hanna Park;Jang-Woo Ryu;Kiwon Park;Sanghee Kang;So-Young Kim;Hoyoung Kim;Jong-Min Bang;Hyunyoon Cho;M. Jang;C. Han;Jung-Bae Lee;K. Kyung;Joo-Sun Choi;Young-Hyun Jun
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文献类型：
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作者：
Jung-Sik Kim;C. Oh;Hocheol Lee;Donghyuk Lee;H. Hwang;S. Hwang;Byongwook Na;Joungwook Moon;Jin-Guk Kim;Hanna Park;Jang-Woo Ryu;Kiwon Park;Sanghee Kang;So-Young Kim;Hoyoung Kim;Jong-Min Bang;Hyunyoon Cho;M. Jang;C. Han;Jung-Bae Lee;K. Kyung;Joo-Sun Choi;Young-Hyun Jun
移动DRAM以其低功耗的特点被广泛应用于便携式电子设备中。近年来，随着市场趋势是多种功能集成在一个芯片上，移动DRAM不仅需要低功耗，而且需要高容量和高速度。为了在移动DRAM中实现这些目标，我们设计了一个1Gb单数据速率（SDR）宽i /O移动SDRAM，具有4通道和512个DQ引脚，具有12.8GB/s的数据带宽。
Mobile DRAM is widely employed in portable electronic devices due to its feature of low power consumption. Recently, as the market trend renders integration of various features in one chip, mobile DRAM is required to have not only low power consumption but also high capacity and high speed. To attain these goals in mobile DRAM, we designed a 1Gb single data rate (SDR) Wide-I/O mobile SDRAM with 4 channels and 512 DQ pins, featuring 12.8GB/s data bandwidth.