Optical and electronic properties of metal doped thermoelectric Zn4Sb3
Optical and electronic properties of metal doped thermoelectric Zn4Sb3
复制标题
DOI：
10.1063/1.2946450
复制
发表时间：
2008-06
影响因子：
3.2
通讯作者：
A. Litvinchuk;J. Nylén;B. Lorenz;A. Guloy;U. Häussermann
中科院分区：
文献类型：
--
作者：
A. Litvinchuk;J. Nylén;B. Lorenz;A. Guloy;U. Häussermann
报道了金属（Pb，Bi，Sn，In）掺杂Zn 4Sb 3热电材料在80-300 K温度范围内的光学和电学性质，涵盖了该热电材料的β，α和α′结构相。金属掺杂改变了β-Zn 4Sb 3中Zn无序和Zn缺乏之间的微妙平衡，并改变了其低温结构行为。红外反射数据分析表明，有序α′-Zn 4Sb 3的形成伴随着自由载流子浓度的显著增加.相反，对于掺杂抑制低温α′相出现的样品，自由载流子浓度仅弱地依赖于温度。在载流子动力学中也发现了掺杂β-Zn 4Sb 3中不同程度的结构无序和低温下导致α-和α′-Zn 4Sb 3的有序化过程。
Optical and electronic properties of metal (Pb, Bi, Sn, and In) doped Zn4Sb3 are reported in the temperature range 80–300 K, which covers the β, α, and α′ structural phases of this thermoelectric material. Metal doping alters the subtle balance between Zn disorder and Zn deficiency present in β-Zn4Sb3 and changes its low temperature structural behavior. Analysis of infrared reflection data shows that the formation of ordered α′-Zn4Sb3 is accompanied by a substantial increase in the free charge-carrier concentration. In contrast, for samples where doping suppresses the occurrence of the low temperature α′-phase, the free charge-carrier concentration is only weakly temperature dependent. Different degrees of structural disorder in doped β-Zn4Sb3 and the ordering processes at low temperatures leading to α- and α′-Zn4Sb3 are also recognized in the charge-carrier dynamics.