Two independent components modeling for Negative Bias Temperature Instability
Two independent components modeling for Negative Bias Temperature Instability
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DOI：
10.1109/irps.2010.5488857
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发表时间：
2010-05
期刊：
影响因子：
--
通讯作者：
V. Huard
中科院分区：
文献类型：
--
作者：
V. Huard
基于从不同技术（纯SiO2或氮化SiO2和HK）获得的大量实验数据，我们认为负偏压温度不稳定性由两个独立的分量组成，呈现不同的电压和温度加速因子以及工艺依赖性。可恢复的部分，快速瞬态效应，服从场辅助LRME空穴捕获/脱陷过程。永久部分是由相同数量的界面陷阱和正的固定电荷，从氢转移到氧桥。这种氢转移首次被证明是可逆的，从而可以深入分析起作用的微观机制。
Based on vast experimental dataset obtained from different technologies (pure or nitrided SiO2 and HK), we suggest that Negative Bias Temperature Instability is made of two independent components, presenting different voltage and temperature acceleration factors as well as process dependences. The recoverable part, subject to fast transient effects, is shown to obey field-assisted LRME hole trapping/detrapping processes. The permanent part is shown to be made of an equal number of interface traps and positive fixed charges, as resulting from hydrogen transfer to oxygen bridge. This hydrogen transfer was shown for the firs time to be reversible allowing in-depth analysis of the microscopic mechanisms at play.