Seamless Joining of Silicon Nitride Ceramics
Seamless Joining of Silicon Nitride Ceramics
复制标题
氮化硅陶瓷的无缝连接
DOI：
10.1111/j.1151-2916.2001.tb00730.x
复制
发表时间：
2001
影响因子：
3.9
通讯作者：
I. D. Dubovetskü
中科院分区：
文献类型：
--
作者：
J. Binner;P. Davis;J. Fernie;I. D. Dubovetskü
Si 3 N4陶瓷的高强度连接已经通过开发有效地消除接缝的工艺来实现，并且可以允许制造大的或复杂的氮化硅体。这种连接方法是基于这样的概念，即当烧结助剂在结合单个颗粒方面是有效的时，它们在连接Si 3 N4的块状件方面可能同样有效。优化的工艺导致Si 3 N4/Si 3 N4接头的室温弯曲强度高达950 MPa，相当于Si 3 N4体强度的90%以上。在1000° C和1200°C的高温下，分别获得666和330 MPa的接头强度，这是迄今为止在这些温度下报告的最高值。这些弯曲强度也大于在这些温度下测量的体Si 3 N4的强度的90%。
High-strength joining of Si3N4 ceramics has been achieved by developing a process that effectively eliminates the seam, and may allow for fabrication of large or complex silicon nitride bodies. This approach to joining is based on the concept that when sintering aids are effective in bonding individual grains, they could be equally effective in joining bulk pieces of Si3N4. Optimization of the process led to Si3N4/Si3N4 joints with room-temperature bend strengths as high as 950 MPa, corresponding to more than 90% of the bulk strength of the Si3N4. At elevated temperatures of 1000° and 1200°C joint strengths of 666 and 330 MPa, respectively, were obtained, which are the highest values reported to date for these temperatures. These bend strengths are also more that 90% of the strength of bulk Si3N4 measured at these temperatures.