Annealing effects in tunnel junctions (voltage annealing)
Annealing effects in tunnel junctions (voltage annealing)
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隧道结的退火效应（电压退火）
DOI：
10.1063/1.327501
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发表时间：
1980
影响因子：
3.2
通讯作者：
J. G. Adler
中科院分区：
文献类型：
--
作者：
M. K. Konkin;J. G. Adler
本文描述了由于电压退火（即在结电极之间保持固定偏压）而发生在Al - oxide-Pb隧道结中的时间依赖性变化。通过检查结电阻、势垒参数（势垒厚度、平均势垒高度和两个电极的势垒高度之间的距离）和非弹性电子隧穿（IET）峰强度的变化，人们发现在结上施加电压会导致铝氧化物界面正电荷的积累或消耗，这取决于所施加偏置的极性。随着电荷的重新分配，电压感应电场也增强或延缓了通常在热退火过程中发生的其他过程（如表面羟基的重定向）。
This paper describes the time‐dependent changes which occur in Al‐oxide–Pb tunnel junctions as a result of voltage annealing (i.e., keeping a fixed bias across junction electrodes). By examining changes in junction resistance, barrier parameters (barrier thickness, average barrier height, and the separation between barrier heights at the two electrodes) and inelastic electron tunneling (IET) peak intensities, one finds that applying a voltage across the junction causes an accumulation or depletion of positive charge at the Al‐oxide interface depending on the polarity of the applied bias. Along with charge redistribution, the voltage‐induced electric field also enhances or retards other processes (such as reorientation of surface hydroxyl groups) which normally take place during thermal annealing.