Harmonically-tuned octave bandwidth 200 W GaN power amplifier
Harmonically-tuned octave bandwidth 200 W GaN power amplifier
复制标题
谐波调谐倍频带宽 200 W GaN 功率放大器
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
G. Boeck
中科院分区：
文献类型：
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作者：
M. T. Arnous;K. Bathich;S. Preis;G. Boeck
介绍了一种200 W高效率宽带GaN HEMT功率放大器的设计、实现和实验结果。功率合成被用于将两个单独的倍频程带宽100 W功率放大器的输出进行联合收割机合成。最佳的基波和谐波负载阻抗，得到了使用负载牵引模拟的有源器件在整个设计频带。采用系统的方法设计了宽带输入输出匹配网络。从连续波大信号测量的最大输出功率大于200 W，获得了几乎一个倍频程带宽。相应的排水效率（功率增加效率）在45-56%（40- 52%）之间。
In this paper, the design, implementation, and experimental results of a 200 W high efficiency broadband GaN HEMT power amplifier (PA) are presented. Power combining was used to combine the outputs of two individual octave bandwidth 100 W power amplifiers. Optimum fundamental and harmonic load impedances were obtained using load-pull simulations for the active device across the design band. A systematic approach was applied for the design of wideband output and input matching networks. From continuous wave large-signal measurements a maximum output power of greater than 200 W was obtained over almost an octave bandwidth. The corresponding drain efficiency (power-added efficiency) ranged between 45-56% (40-52 %).