Grain Growth Stagnation in Thin Films Due to Shear-Coupled Grain Boundary Migration
Grain Growth Stagnation in Thin Films Due to Shear-Coupled Grain Boundary Migration
复制标题
由于剪切耦合晶界迁移导致薄膜中晶粒生长停滞
作者：
E. Rabkin;D. Srolovitz
摘要：本文研究了附着在衬底上的薄膜的正常晶粒生长。研究表明，剪切耦合晶界迁移导致薄膜中弹性应力的积累。提出了一种结合偏斜理论元素和正常晶粒生长的伯克-特恩布尔模型的半定量晶粒生长模型。研究表明，剪切耦合晶界迁移可能导致正常晶粒生长停滞，而当耦合系数较高时，薄膜中的晶粒根本不生长。最后，讨论了促使晶粒生长的应力松弛机制。
Abstract Normal grain growth in thin films attached to a substrate has been considered. It has been shown that shear-coupled grain boundary migration results in the build-up of elastic stresses in the film. A semi-quantitative model of grain growth combining the elements of disclinations theory with the Burke-Turnbull model of normal grain growth has been proposed. It has been shown that shear-coupled grain boundary migration may lead to stagnation of normal grain growth, whereas for high coupling factor values, the grains in the film do not grow at all. Finally, the mechanisms of stress relaxation enabling some grain growth are discussed.