Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature

Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature
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DOI:
10.1126/sciadv.aat8896
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发表时间:
2019-02
期刊:
影响因子:
13.6
通讯作者:
Guoqiang Zhang;M. Takiguchi;K. Tateno;T. Tawara;M. Notomi;H. Gotoh
Guoqiang Zhang;M. Takiguchi;K. Tateno;T. Tawara;M. Notomi;H. Gotoh
中科院分区:
综合性期刊1区
文献类型:
--
作者:
Guoqiang Zhang;M. Takiguchi;K. Tateno;T. Tawara;M. Notomi;H. Gotoh

文献摘要

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我们演示了室温下单根InAs/InP纳米线的光泵浦电信波段激光。自下而上的气液固方法制造的单纳米线激光器在光纤通信系统中具有重要的技术意义,但仍然具有挑战性。在这里,我们报告的电信波段单纳米线激光器在室温下工作的多量子盘InP/InAs异质结构纳米线的基础上。透射电子显微镜研究表明,采用铟颗粒催化剂,通过自催化气-液-固模式在InP纳米线中生长出了高度均匀的多量子盘InP/InAs结构。单个纳米线的光激发在室温下产生电信波段的激光。通过沿着轴向量子限域调制单个InAs量子盘的厚度,实现了激光波长在电信波段的调谐。在室温下工作的电信波段单纳米线激光器的演示是为光电子和数据通信提供实用的可集成相干光源的重要一步。
We demonstrate optically pumped telecom-band lasing in single InAs/InP nanowires at room temperature. Telecom-band single nanowire lasers made by the bottom-up vapor-liquid-solid approach, which is technologically important in optical fiber communication systems, still remain challenging. Here, we report telecom-band single nanowire lasers operating at room temperature based on multi-quantum-disk InP/InAs heterostructure nanowires. Transmission electron microscopy studies show that highly uniform multi-quantum-disk InP/InAs structure is grown in InP nanowires by self-catalyzed vapor-liquid-solid mode using indium particle catalysts. Optical excitation of individual nanowires yielded lasing in telecom band operating at room temperature. We show the tunability of laser wavelength range in telecom band by modulating the thickness of single InAs quantum disks through quantum confinement along the axial direction. The demonstration of telecom-band single nanowire lasers operating at room temperature is a major step forward in providing practical integrable coherent light sources for optoelectronics and data communication.