Tungsten nanowires and their field electron emission properties
Tungsten nanowires and their field electron emission properties
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DOI：
10.1063/1.1490625
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发表时间：
2002-07
影响因子：
4
通讯作者：
Yun‐Hi Lee;C. Choi;Y. Jang;E. Kim;B. Ju;N. Min;J. Ahn
中科院分区：
文献类型：
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作者：
Yun‐Hi Lee;C. Choi;Y. Jang;E. Kim;B. Ju;N. Min;J. Ahn
我们报道了通过对钨薄膜进行简单的热处理来制备钨纳米线，这种纳米线具有自催化层的作用，并且具有优异的电子场发射性能。得到的纳米线直径在10~50 nm之间，表现出完美的直线度和整齐的外观。电子发射的典型开启场约为5V/μm，场增强因子β为38256，与高效单壁碳纳米管发射体的场增强因子非常接近。最令人兴奋的结果是，完全直的纳米线可以很容易地制造出来，作为兆比特级别的互连和纳米机械组件的有希望的构建块，而不需要故意使用任何多相催化剂。
We report the fabrication of tungsten nanowires, by simple thermal treatment of W films, that behave as self-catalytic layers and their excellent electron field emission properties as well. The obtained nanowires have a diameter ranging from 10 to 50 nm, showing perfect straightness and neat appearance. Typical turn-on field for the electron emission is about 5 V/μm, and the field enhancement factor β becomes 38 256, which is very close to that of the high efficient single-wall carbon nanotube emitters. The most exciting result is the possibility of easy fabrication of perfectly straight nanowires as promising building blocks for terabit-level interconnection and nanomachine components without the intentional use of any heterogeneous catalysts.