Introducing Artificial Pinning Centers Into YBCO Thin Films to Improve Surface Resistance in a DC Magnetic Field
Introducing Artificial Pinning Centers Into YBCO Thin Films to Improve Surface Resistance in a DC Magnetic Field
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将人工钉扎中心引入 YBCO 薄膜以改善直流磁场中的表面电阻
DOI：
10.1109/tasc.2012.2233849
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
S. Ohshima
中科院分区：
文献类型：
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作者：
S. Sato;T. Honma;S. Takahashi;K. Sato;M. Watanabe;K .Ichikawa;K. Takeda; K. Nakagawa;A. Saito;S. Ohshima
研究了在YBa 2Cu 3 O 7-δ（YBCO）薄膜中引入人工钉扎中心（APC）对降低直流强磁场下微波表面电阻（Rs）的影响，以获得高品质因数（Q）的高性能微波器件。采用脉冲激光沉积技术在MgO（100）衬底上制备了具有和不具有APC的YBCO薄膜。我们使用商业的0、1.5、3.0重量% BaMO 3（BMO，M=Zr，Hf）掺杂的YBCO靶。YBCO薄膜的δω和δφ随BMO掺杂量的增加而增加，且BHO掺杂的增加幅度小于BZO掺杂。用介质谐振器法在21.8GHz处测量了这些薄膜的电阻率，测量时施加了平行于YBCO薄膜c轴的高达5.0T的直流磁场。BMO掺杂的YBCO薄膜在磁场中的电阻率比纯YBCO薄膜的电阻率小。特别是1.5wt%BHO掺杂的YBCO薄膜在4 T和20 K下的电阻率最小，约为纯YBCO薄膜电阻率的一半。结果表明，在YBCO薄膜中引入APC可以有效地降低直流磁场下的电阻率。
We investigated the effect of introducing artificial pinning centers (APCs) into YBa2Cu3O7-δ(YBCO) thin films to reduce the microwave surface resistance (Rs) in a high dc magnetic field for high-performance microwave devices with high-quality factor (Q). YBCO thin films with and without APCs were deposited on MgO(100) substrates by using the pulsed laser deposition technique. We used commercial 0, 1.5, 3.0 wt% BaMO3(BMO,M=Zr, Hf) doped YBCO targets. The δω and δφ of the YBCO thin films increased as BMO doping increased, and the rate of increase appeared to be smaller for BHO doping than for BZO doping. TheRsof these thin films was measured at 21.8 GHz with the dielectric resonator method and a dc magnetic field of up to 5.0 T was applied parallel to the c-axis of the YBCO thin films during theRsmeasurements. TheRsof the BMO doped films in the magnetic field was smaller than that of the pure YBCO films. In particular theRsof the 1.5 wt% BHO doped films was the smallest among all of the films, about half compared with that of theRsof the pure YBCO films at 4 T and 20 K. As a result, we found that introducing APCs into YBCO thin films is effective for decreasingRsunder a dc magnetic field.