Controllable valley and spin-polarized transport and negative magnetoresistance in a silicene junction
Controllable valley and spin-polarized transport and negative magnetoresistance in a silicene junction
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DOI：
10.1209/0295-5075/111/37007
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发表时间：
2015-08
期刊：
影响因子：
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通讯作者：
Zhi Ping Niu;S. Dong
中科院分区：
文献类型：
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作者：
Zhi Ping Niu;S. Dong
我们研究了通过铁磁/铁磁/铁磁硅烯结的谷和自旋分辨输运。对于光照射下交换场为零的普通硅结，通过调制能量e，可以观察到100%的谷/自旋极化，通过增强光照射强度或提高中间层VM的栅电压，可以发现100%的自旋和大的谷极化。如果考虑交错交换场而不是光照射，通过调整E，可以证明一个完全极化的谷/自旋输运。通过调整交错交换场或VM，可以看到100%谷和大的自旋极化。在铁磁/法向/铁磁结中，根据圆偏振光的极化方向，可以得到较大的负或正磁阻。这里得到的结果可以用器件的能带结构来解释。
We investigate the valley and spin-resolved transport through a ferromagnetic/ferromagnetic/ferromagnetic silicene junction. For the normal silicene junction with zero exchange field in the presence of photo-irradiation, we observe a 100% valley/spin polarization by modulating the energy E. By enhancing the strength of the photo-irradiation or the gate voltage in the middle layer VM, a 100% spin and large valley polarization can be found. If the staggered exchange field is considered instead of the photo-irradiation, by tuning E a fully polarized valley/spin transport is demonstrated. By tuning the staggered exchange field or VM, a 100% valley and large spin polarization can be seen. In the ferromagnetic/normal/ferromagnetic junction, depending on the polarized direction of the circularly polarized light, a large negative or positive magnetoresistance can be obtained. The results obtained here can be explained by the band structures of the device.